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姓名：吕笑梅
目前身份：
担任导师情况：
学术头衔：
博士生导师，
教育部“新世纪优秀人才支持计划”入选者
学科领域：
凝聚态物理学
研究兴趣：一直从事铁电材料的制备、宏微观特性表征以及尺寸、应力效应的实验和理论研究工作。
　吕笑梅，女，博士，教授，博导。自1993年起，一直从事铁电材料的制备、宏微观特性表征以及尺寸、应力效应的实验和理论研究工作，在Appl. Phys. Lett.等刊物上发表SCI论文30余篇。具体主要开展了以下三个方面的研究工作：
　　第一个方面，铁电薄膜的激光晶化研究。工作背景主要是为了降低铁电薄膜的制备温度，一般加热晶化温度都在600度以上。首次尝试将激光晶化手段引入铁电薄膜的制备，分别利用488nm的Ar＋激光和248nm的KrF脉冲激光，成功地在室温衬底上得到了经X射线衍射证实是纯钙钛矿结构的PZT铁电薄膜。相关的两篇文章被他人引用17次。
　　第二个方面，关于铁电材料的应力效应研究。应力是在薄膜中普遍存在的，对薄膜各方面性能有很大的影响。鉴于国际同行的主要实验集中在钙钛矿材料中，而且实验结果和解释模型都存在不确定性，自行设计了独特又简便的应力装置，能够调整应力大小并同时进行电学测量。在此基础上，首次对钙钛矿材料和Bi系层状结构材料进行了对照研究，并发现应力对PZT和SBT极化强度的影响恰好相反，据此提出并详细阐述了应力下畴重新取向的模型。负责一项该方面的国家自然科学基金面上项目，顺利结题后被评为当年度优秀成果。
　　第三个方面，铁电材料的扫描探针显微镜研究。采用新颖巧妙的样品制备手段，首次成功地用配备压电力模式的扫描探针显微镜（SPM）观察了铁电薄膜界面铁电特性，证实了界面层在自发极化、反转特性及极化保持方面都具有与膜体内不同的特性。另外，以导电探针成功诱导了铁电体材料的极化反转，并研究了相关的畴界动力学问题。
　　至今负责并结题一项国家自然科学基金面上项目、一项江苏省自然科学基金创新人才基金项目。目前参加一项国家自然科学基金优秀创新研究群体基金项目，负责一项国家自然科学基金重大计划面上项目，另有一项负责的国家自然科学基金面上项目已获批准。
X. M. Lu，
J. S. Zhu，
W. S. Hu，
Z. G. Liu，
and Y. N. Wang
Appl. Phys. Lett. 66 (19), 8 May 1995，-0001，（）：
-1年11月30日
Amorphous PZT thin films 600nm thick were rf sputtered from a PbZr0.44Ti0.56O3 ceramic target with excess PbO onto glass substrates maintained at room temperature. After irradiation with a 248 nm KrF pulsed excimer laser with a power density of 2.33107W/m2 at a frequency of 50Hz and a pulsed width of 30ns for 2min, the films crystallized into the PZT perovskite structure to a depth of about 120 nm. Comparisons of this work with PZT crystallization obtained from a traditional oven and 488 nm Ar1 laser postdeposition treatments are also given.
J.S. Zhu，
W.Y. Zhang，
Thin Solid Films 274(，-0001，（）：
-1年11月30日
BaTi03 thin films were deposited using the r.f. magnetron sputtering technique on unheated fused quartz, poly-crystalline Pt and (111) Si substrates. The films with different grain sizes were obtained through post-deposition heat treatment. The optical transmittance of the films with different grain sizes on fused quartz substrates was measured and the observed shift of the energy gap with grain size was discussed.
Optical properties，
Optical spectroscopy，
Sputtering，
Titanium oxide
AND Y.N.WANG
Feroelectrics, 1997, Vol. 195, pp. 255-258，-0001，（）：
-1年11月30日
Laser (Ar+, Pulsed excimer KrF) crystallization technique was used on if-sputtered amorphous PZT thin films to decrease the substrate temperature during the fabrication of perovskite PZT thin films. The microstructure of the films was compared with those got through traditional oven treatment and rapid thermal process (RTP).
Xiaomei Lu，
Jinsong ZhuU，
Zhiguo Liu，
Xiaoshan Xu，
Yening Wang
Thin Solid Films 375(，-0001，（）：
-1年11月30日
An uneven distribution of stress in the thickness direction was introduced into Landau theory to investigate the critical behavior of phase transition of ferroelectric thin films. The Curie temperature TC was calculated to increase and decrease for compressive and tensile stress cases, respectively. The dispersion of phase transition was predicted. The diffusivity increased with stress, but showed a non-monotonic relation to film thickness. The results of the calculations were compared with some experimental results.
Ferroelectric thin films，
Phase transition，
Landau theory
Xiaomei Lu，
a) Jinsong Zhu，
Xuelian Li，
Zhigang Zhang，
Xuesong Zhang，
Yong Ding，
and Yening Wang
APPLIED PHYSICS LETTERS VOLUME 76, NUMBER 21 22 MAY 2000，-0001，（）：
-1年11月30日
The effect of uniaxial stress on the ferroelectric properties of SrBi2Ta2O9 films with different thicknesses (330, 440, and 660nm) has been investigated. It is found that both the remnant polarization (Pr) and the spontaneous polarization (Ps) decrease with the application of compressive stress, but increase with the application of tensile stress. And the changes of Pr and Ps become larger for thicker films. For the 660nm film, as the stress changed from 2100MPa (compressive) to 1100MPa (tensile), the Pr increases from 21.8% to 11.8%. Testing voltages in the range of 3-6V showed no impact on the amplitude of change on the polarization under mechanical stress. Mechanical stress also did not show significant impact on the coercive field.
XIAOMEI LU，
JINGSONG ZHU，
XUESONG ZHANG，
ZHIGUO LIU and YENNING WANG
Inrgroted Fernelectries, 2001, Vol. 32, pp. 55-62，-0001，（）：
-1年11月30日
The effect of stress on the physical properties of SBT thin films has been investigated. Both Remnant polarization (Pr) and spontaneous polarization (Ps) increase with the application of tensile stress, while decrease with the application of compressive stress. And the variation of Pr increase with the maximum testing voltage in the range 3-12V. The fatigue testing shows that a large voltage cycling before testing and the applied stress are both helpful to preventing the polarization suppression, and the result is explained by the coarsening of domains. The stress about 100Mpa seems to have no observable destructive effect on the SBT thin films.
ferroelectric thin films，
fatigue behavior，
stress efect
Xiaomei Lu，
a) Jinsong Zhu，
Xuesong Zhang，
Zhiguo Liu，
and Yening Wang
APPLIED PHYSICS LETTERS VOLUME 80, NUMBER 16 22 APRIL 2002，-0001，（）：
-1年11月30日
The effect of poling on the switching properties of SrBi2Ta2O9 films was investigated via the technique of switching current testing. The samples with 660nm thickness were poled under dc voltage ranging from 1 to 8.25V, and for different duration from 1 to 80min. After poling, both the net-switched charge and switching time first jumped to higher values, then decreased with the elapse of time. The decreases were separated into two regimes, a fast and slow regime. The change of net-switched charge and switching time with poling voltage and poling time showed nonmonotonic behavior. These results were explained by the change of domain kinetics and the redistribution of charge carriers under both the applied and depolarization field.
X. M. Lu，
a) F. Schlaphof，
S. Grafstrom，
C. Loppacher，
and L. M. Engb)
APPLIED PHYSICS LETTERS VOLUME 81, NUMBER 17 21 OCTOBER 2002，-0001，（）：
-1年11月30日
We report on a novel approach for the investigation of the Pb ZrxTi12x)O3/Pt interface applying scanning force microscopy techniques. Ferroelectric samples PZT film/Pt/SiO2/Si) were polished at a shallow angle (～6.1°) thereby enlarging the film cross section from a 430nm film thickness to a width of more than 4mm. Piezoresponse force microscopy and Kelvin probe force microscopy were applied in order to deduce the dielectric polarization P and local potential distribution over the full cross section. We clearly observe a transition layer 240nm which manifests itself both in a gradual decrease of the piezoresponse signal as a function of film thickness and in a corresponding variation of the surface potential. Furthermore, after polarization reversal due to a dc voltage applied to the tip, a different retention behavior was observed within the transition layer. The results are tentatively attributed to negatively charged defects accumulated at the PZT/Pt interface.
Xiumei Wu，
Xiaomei Lu，
a! Aiping Chen，
Yuan Yin，
Dong Qian，
and Jinsong Zhu
APPLIED PHYSICS LETTERS 86, 05)，-0001，（）：
-1年11月30日
The ferroelectric properties of Bi3.15Nd0.85Ti3O12 and Bi3.25La0.75Ti3O12 thin films under applied uniaxial stress were investigated. It was observed in both films that the remnant polarization sPrd increased with tensile stress, while it decreased with compressive stress. On the contrary, the coercive field sEcd decreased with the stress changing from maximum compression to maximum tension. Fatigue behavior of the films was improved under either compressive or tensile stress compared with zero stress sfree stated. These results can be well explained in the scenario of domain reorie however, the polarization-strain coupling mechanism could not be simply ruled out.
Li-Ben Lib，
Xiu-Mei Wua，
Xiao-Mei Lua，
Jing-Song Zhua
Solid State Communications 135(，-0001，（）：
-1年11月30日
Landau–Devonshire theory is used to investigate the effect of external mechanical stress (or strain) on domain structure and the remanent polarization of Pb(Zr0.35Ti0.65)O3 (PZT) thin films, by considering the competition between the external stress and the intrinsic stresses. A set of intrinsic stress functions in PZT film is obtained by solving elastic mechanical equations. At room temperature, the intrinsic stresses may lead to an alternate a/c/a/c domain structure. While an external in-plane tensile stress increases the Gibbs free energy of the c-phase and decreases that of a-phase. Parts of the c-domains turn to a-domains, so as to reduce the remanent polarization of the PZT films.
Ferroelectric，
Domain structure，
Polarization
X. M. Lu，
J. S. Zhu，
W. S. Hu，
Z. G. Liu，
and Y. N. Wang
Appl. Phys. Lett. 66 (19), 8 May 1995，-0001，（）：
-1年11月30日
Amorphous PZT thin films 600nm thick were rf sputtered from a PbZr0.44Ti0.56O3 ceramic target with excess PbO onto glass substrates maintained at room temperature. After irradiation with a 248 nm KrF pulsed excimer laser with a power density of 2.33107W/m2 at a frequency of 50Hz and a pulsed width of 30ns for 2min, the films crystallized into the PZT perovskite structure to a depth of about 120 nm. Comparisons of this work with PZT crystallization obtained from a traditional oven and 488 nm Ar1 laser postdeposition treatments are also given.
Xiaomei Lu，
Jinsong ZhuU，
Zhiguo Liu，
Xiaoshan Xu，
Yening Wang
Thin Solid Films 375(，-0001，（）：
-1年11月30日
An uneven distribution of stress in the thickness direction was introduced into Landau theory to investigate the critical behavior of phase transition of ferroelectric thin films. The Curie temperature TC was calculated to increase and decrease for compressive and tensile stress cases, respectively. The dispersion of phase transition was predicted. The diffusivity increased with stress, but showed a non-monotonic relation to film thickness. The results of the calculations were compared with some experimental results.
Ferroelectric thin films，
Phase transition，
Landau theory
J.S. Zhu，
W.Y. Zhang，
Thin Solid Films 274(，-0001，（）：
-1年11月30日
BaTi03 thin films were deposited using the r.f. magnetron sputtering technique on unheated fused quartz, poly-crystalline Pt and (111) Si substrates. The films with different grain sizes were obtained through post-deposition heat treatment. The optical transmittance of the films with different grain sizes on fused quartz substrates was measured and the observed shift of the energy gap with grain size was discussed.
Optical properties，
Optical spectroscopy，
Sputtering，
Titanium oxide
Xiaomei Lu，
a) Jinsong Zhu，
Xuelian Li，
Zhigang Zhang，
Xuesong Zhang，
Yong Ding，
and Yening Wang
APPLIED PHYSICS LETTERS VOLUME 76, NUMBER 21 22 MAY 2000，-0001，（）：
-1年11月30日
The effect of uniaxial stress on the ferroelectric properties of SrBi2Ta2O9 films with different thicknesses (330, 440, and 660nm) has been investigated. It is found that both the remnant polarization (Pr) and the spontaneous polarization (Ps) decrease with the application of compressive stress, but increase with the application of tensile stress. And the changes of Pr and Ps become larger for thicker films. For the 660nm film, as the stress changed from 2100MPa (compressive) to 1100MPa (tensile), the Pr increases from 21.8% to 11.8%. Testing voltages in the range of 3-6V showed no impact on the amplitude of change on the polarization under mechanical stress. Mechanical stress also did not show significant impact on the coercive field.
Xiaomei Lu，
a) Jinsong Zhu，
Xuesong Zhang，
Zhiguo Liu，
and Yening Wang
APPLIED PHYSICS LETTERS VOLUME 80, NUMBER 16 22 APRIL 2002，-0001，（）：
-1年11月30日
The effect of poling on the switching properties of SrBi2Ta2O9 films was investigated via the technique of switching current testing. The samples with 660nm thickness were poled under dc voltage ranging from 1 to 8.25V, and for different duration from 1 to 80min. After poling, both the net-switched charge and switching time first jumped to higher values, then decreased with the elapse of time. The decreases were separated into two regimes, a fast and slow regime. The change of net-switched charge and switching time with poling voltage and poling time showed nonmonotonic behavior. These results were explained by the change of domain kinetics and the redistribution of charge carriers under both the applied and depolarization field.
AND Y.N.WANG
Feroelectrics, 1997, Vol. 195, pp. 255-258，-0001，（）：
-1年11月30日
Laser (Ar+, Pulsed excimer KrF) crystallization technique was used on if-sputtered amorphous PZT thin films to decrease the substrate temperature during the fabrication of perovskite PZT thin films. The microstructure of the films was compared with those got through traditional oven treatment and rapid thermal process (RTP).
Xiumei Wu，
Xiaomei Lu，
a! Aiping Chen，
Yuan Yin，
Dong Qian，
and Jinsong Zhu
APPLIED PHYSICS LETTERS 86, 05)，-0001，（）：
-1年11月30日
The ferroelectric properties of Bi3.15Nd0.85Ti3O12 and Bi3.25La0.75Ti3O12 thin films under applied uniaxial stress were investigated. It was observed in both films that the remnant polarization sPrd increased with tensile stress, while it decreased with compressive stress. On the contrary, the coercive field sEcd decreased with the stress changing from maximum compression to maximum tension. Fatigue behavior of the films was improved under either compressive or tensile stress compared with zero stress sfree stated. These results can be well explained in the scenario of domain reorie however, the polarization-strain coupling mechanism could not be simply ruled out.
XIAOMEI LU，
JINGSONG ZHU，
XUESONG ZHANG，
ZHIGUO LIU and YENNING WANG
Inrgroted Fernelectries, 2001, Vol. 32, pp. 55-62，-0001，（）：
-1年11月30日
The effect of stress on the physical properties of SBT thin films has been investigated. Both Remnant polarization (Pr) and spontaneous polarization (Ps) increase with the application of tensile stress, while decrease with the application of compressive stress. And the variation of Pr increase with the maximum testing voltage in the range 3-12V. The fatigue testing shows that a large voltage cycling before testing and the applied stress are both helpful to preventing the polarization suppression, and the result is explained by the coarsening of domains. The stress about 100Mpa seems to have no observable destructive effect on the SBT thin films.
ferroelectric thin films，
fatigue behavior，
stress efect
X. M. Lu，
a) F. Schlaphof，
S. Grafstrom，
C. Loppacher，
and L. M. Engb)
APPLIED PHYSICS LETTERS VOLUME 81, NUMBER 17 21 OCTOBER 2002，-0001，（）：
-1年11月30日
We report on a novel approach for the investigation of the Pb ZrxTi12x)O3/Pt interface applying scanning force microscopy techniques. Ferroelectric samples PZT film/Pt/SiO2/Si) were polished at a shallow angle (～6.1°) thereby enlarging the film cross section from a 430nm film thickness to a width of more than 4mm. Piezoresponse force microscopy and Kelvin probe force microscopy were applied in order to deduce the dielectric polarization P and local potential distribution over the full cross section. We clearly observe a transition layer 240nm which manifests itself both in a gradual decrease of the piezoresponse signal as a function of film thickness and in a corresponding variation of the surface potential. Furthermore, after polarization reversal due to a dc voltage applied to the tip, a different retention behavior was observed within the transition layer. The results are tentatively attributed to negatively charged defects accumulated at the PZT/Pt interface.
Li-Ben Lib，
Xiu-Mei Wua，
Xiao-Mei Lua，
Jing-Song Zhua
Solid State Communications 135(，-0001，（）：
-1年11月30日
Landau–Devonshire theory is used to investigate the effect of external mechanical stress (or strain) on domain structure and the remanent polarization of Pb(Zr0.35Ti0.65)O3 (PZT) thin films, by considering the competition between the external stress and the intrinsic stresses. A set of intrinsic stress functions in PZT film is obtained by solving elastic mechanical equations. At room temperature, the intrinsic stresses may lead to an alternate a/c/a/c domain structure. While an external in-plane tensile stress increases the Gibbs free energy of the c-phase and decreases that of a-phase. Parts of the c-domains turn to a-domains, so as to reduce the remanent polarization of the PZT films.
Ferroelectric，
Domain structure，
Polarization您当前所在位置：
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姓名：包刚
目前身份：
担任导师情况：
学术头衔：
博士生导师，
教育部“长江学者计划”入选者
学科领域：
研究兴趣：衍射光学、非线性光学、近场光学及其它波传播问题的数学建模，理论分析和科学计算。
包刚，男，浙江大学数学系教授、主任。1991年5月获得美国莱斯大学应用数学博士学位，1999年8月任美国密西根州立大学教授，密西根工业与应用数学中心创始人、主任。吉林大学长江学者特聘教授。
包刚教授是光学和Maxwell方程组这一重要应用领域的国际学科带头人。
近年来其工作主要涉及衍射光学、非线性光学、近场光学及其它波传播问题的数学建模，理论分析和科学计算。他最早开始对光栅衍射问题的数学模型进行系统研究；第一个获得间断系数有源Maxwell方程的Lp估计这一非常重要和深刻的成果；分析和发展了一系列Maxwell方程组应用问题的基于有限元方法，最小二乘有限元方法，杂交边界有限元方法的算法；发展了一系列新的技巧，为光学和电磁学中的反问题和最优设计问题提供了原创性的结果。
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