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In-situ observation of morphological change on LPE grown surface in semiconductors
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, 1 March 1993, Pages 557-561
In-situ observation of morphological change on LPE grown surface in semiconductors
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The Institute of Space and Astronautical Science, 3-1-1 Yoshino-dai, Sagamihara, Kanagawa 229, Japan
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On the surface of LPE grown crystals, macrosteps are frequently observed. Macrosteps vary with the growth conditions of the process morphologically and induce the segregation of dopant atoms. The influence of the growth rate and temperature gradient on the surface morphology during LPE growth have been studied by in-situ observation technique with an infrared microscopic interferometer. It was shown that the positive temperature gradient in the liquid tends to suppress the appearance of macrosteps.
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, April 2007, Pages 555-557
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Sección de Epidemiología. Centro de Salud Pública de Castellón. Castellón. Espa?a
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